Berlin 2015 – scientific programme
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DS: Fachverband Dünne Schichten
DS 2: Thin Film Characterisation I: Structure Analysis and Composition
DS 2.6: Talk
Monday, March 16, 2015, 10:45–11:00, H 0111
First Synthesis Approach of Layered ZrSe2 and New Misfit Layer Compounds (PbSe)1+δ(ZrSe2)n Using Modulated Elemental Reactants — •Benjamin Eickmeier1, Matti Alemayehu2, Robert Zierold1, Matthias Falmbigl2, Sage Bauers2, Johannes Gooth1, Torben Dankwort3, Julie Chouinard2, Carmen Voigt4, Carsten Ronning4, David C Johnson2, and Kornelius Nielsch1 — 1Universität Hamburg, Hamburg, Germany — 2University of Oregon, Eugene, USA — 3Christian-Albrechts-Universität zu Kiel, Kiel, Germany — 4Universität Jena, Jena, Germany
A first synthesis approach of the layered dichalcogenide ZrSe2 and a new family of misfit layer compounds (PbSe)1+δ(ZrSe2)n (n=1,2,3) using the physical vapor deposition technique of modulated elemental reactants is reported. Thin films of about 30 nm were deposited onto Si and SiO2 and characterized with XRD, XRR, and TEM. Composition data was acquired with electron probe microanalysis. These misfit layer compounds are metastable systems and consist of an intergrowth structure between one rock salt sublattice PbSe and n dichalcogenide sublattices ZrSe2, which are alternately stacked upon each other. In the temperature range of 120–200 K hopping transport was observed on the presumable (PbSe)1+δ(ZrSe2)1, due to crystalline grains embedded in an amorphous matrix. Previous studies of misfit layer compounds report an unusual decrease up to six times of the in-plane thermal conductivity compared to single dichalcogenides. This trend makes those systems promising alternatives for e.g. thermoelectric applications.