Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 2: Thin Film Characterisation I: Structure Analysis and Composition

DS 2.8: Talk

Monday, March 16, 2015, 11:30–11:45, H 0111

Comparative Studies in the Physical and Optical Properties of Indium Tin Oxide Films by Various Fabrication Processes — •Akemi Tamanai and Annemarie Pucci — Kirchhoff-Institut für Physik der Universität Heidelberg, Im Neuenheimer Feld 227, 69120 Heidelberg

Tin-doped indium oxide (ITO) is a highly transparent n-type semiconductor material in VIS\UV region caused by its wide band gap. For improving the resistivity and high optical transmittance performances of ITO films, various ITO fabrication processes have been introduced so far. Since their physical and optical properties are strongly influenced by fabrication processes such as sputtering, electron beam evaporation, and pulsed-laser deposition, changes in, for instance, the annealing temperature and environment, the surface resistance, and its morphology directly affect both properties. Hence, in order to enhance and deepen the understanding for the dielectric properties of various ITO films, spectroscopic IR ellipsometry (Woollam IR-VASE) measurements have been carried out for determining the dielectric constants (ε₁ and ε₂), the degree of electric scattering time (τ), the plasma frequency (ω_p), and the damping constant (γ) defined in the Drude model which describes free-carrier contribution to dielectric properties.