Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 22: Interfaces and Thin Films III (joint session with CPP)
DS 22.5: Vortrag
Mittwoch, 18. März 2015, 10:30–10:45, C 243
Light absorption of Ultrathin Gallium Layers during Oxidation — •Frank Lawrenz1, Chrisitane A. Helm1, and Stephan Block2 — 1Physik, Uni Greifswald, 17487 Greifswald, Germany — 2Chalmers University of Technology, 412 96 Göteborg, Sweden
The fabrication of ultrathin metal oxide layers is important for many technological applications. Here we describe a simple method for the formation of 3 nm thick gallium oxide layers which extent up to 1 cm2. Liquid gallium is applied onto silica surfaces, leaving thin layers that are immediately oxidized at their surface under ambient conditions, followed by slower oxidation of the remaining layer. This is quantified using UV-Vis absorption measurements, indicating that the oxidation of the entire layer is completed after two weeks. A rate model is developed to describe the oxidation of ultrathin Ga layers.