Berlin 2015 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 23: Topological insulators: Theory (HL with DS/MA/O/TT)

DS 23.8: Vortrag

Mittwoch, 18. März 2015, 11:15–11:30, ER 270

Functionalized Bismuth Films: Giant Gap Quantum Spin Hall and Valley-Polarized Quantum Anomalous Hall States — •Chengwang Niu, Gustav Bihlmayer, Hongbin Zhang, Daniel Wortmann, Stefan Blügel, and Yuriy Mokrousov — Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany

The search for new large band gap quantum spin Hall (QSH) and quantum anomalous Hall (QAH) insulators is critical for their realistic applications at room temperature [1,2]. Here we predict, based on first principles calculations, that the band gap of QSH and QAH states can be as large as 1.01 eV and 0.35 eV in an H-decorated Bi(111) film [3]. The origin of this giant band gap lies both in the large spin-orbit interaction of Bi and the H-mediated exceptional electronic and structural properties. Moreover, we find that the QAH state also possesses the properties of quantum valley Hall state, thus intrinsically realising the so-called valley-polarized QAH effect. We further investigate the realization of large gap QSH and QAH states in an H-decorated Bi(110) film and X-decorated (X=F, Cl, Br, and I) Bi(111) films.

This work was supported by the Priority Program 1666 of the DFG and project VH-NG-513 of the HGF.

[1]M. Hasan and C. Kane, Rev. Mod. Phys. 82, 3045 (2010).

[2]X.-L. Qi and S.-C. Zhang, Rev. Mod. Phys. 83, 1057 (2011).

[3]Chengwang Niu, Gustav Bihlmayer, Hongbin Zhang, Daniel Wortmann, Stefan Blügel, and Yuriy Mokrousov, submitted.