Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 26: Layer Properties: Electrical, Optical, and Mechanical Properties

DS 26.12: Talk

Wednesday, March 18, 2015, 18:00–18:15, H 2032

Optical and electrical properties of silicon nanocrystals based on a SiH4-O2 PECVD process — •Jan Laube, Sebastian Gutsch, Daniel Hiller, and Margit Zacharias — Laboratory for Nanotechnology, Department of Microsystems Engineering - IMTEK, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg im Breisgau, Germany

A monosilane (SiH4) and oxygen (O2) based plasma-enhanced chemical vapor deposition process (PECVD) for the growth of silicon-rich oxide / silicon dioxide superlattices was developed.[1,2] In contrast to the conventional nitrous oxide (N2O) based oxynitride-process,[3] we achieved thereby PECVD-grown size-controlled silicon nanocrystals in pure, N-free silicon dioxide matrix.

We present a detailed study based on optical (PL), electrical (C-V, I-V) and structural (TEM) measurements that reveal the different properties of nominally identical Si nanocrystals in oxynitride and N-free oxide matrix. Most strikingly we find negligible differences in the optical performance (PL quantum yield), whereas substantial differences in the current transport and transient charging behaviour persist. The role of the pure oxide vs. oxinitride matrix on the properties of Si quantum dots is discussed in the context of potential applications in photovoltaics and optoelectronics.

[1] M. Zacharias et al., APL 80, 2002

[2] J. Laube et al., JAP 116, 2014

[3] A.M. Hartel et al., TSF 520, 2011

[4] S. Gutsch et al., JAP 113, 2013