Berlin 2015 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 26: Layer Properties: Electrical, Optical, and Mechanical Properties

DS 26.4: Vortrag

Mittwoch, 18. März 2015, 15:45–16:00, H 2032

Solution Processed Deposition of Large-Size MoS2 Nanoflakes — •Xiaoling Zeng, Marlis Ortel, and Veit Wagner — Jacobs University Bremen, 28759 Bremen, Germany

The gap in understanding MoS2 deposition processes needs to be closed in order to utilize all its excellent properties in nano-electronics. In this work, deposition of MoS2-flakes from precursor solution by dip-coating on Si-substrates was investigated. Ammonium tetrathiomolybdate (ATTM) dissolved in deionized water was used as precursor solution. The MoS2-flakes obtained from the precursor solutions were analyzed by atomic force and optical microscopy, PL, UV-Vis and Raman spectroscopy.

The deposition process of the flakes was found to obey Landau-Levich mechanism with respect to the relationship between the withdraw speed and film size and thickness. By optimization of deposition parameters, MoS2 flakes exceeding 150 micro meter in lateral size were obtained. The thickness in the range of 2-5ML was confirmed by AFM and Raman measurements. Raman and PL measurements indicate that the quality of the film strongly depends on the post thermal treatment and its atmospheric composition. This low-cost solution-based deposition method is simple and non-toxic, which is also suitable for preparation of large transition metal dichalcogenides nanoflakes for various applications.