Berlin 2015 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 29: Oxide and insulator surface: Structure, epitaxy and growth (joint session with O)

DS 29.5: Vortrag

Mittwoch, 18. März 2015, 16:00–16:15, MA 042

Growth of ultrathin Silica films on Ru(0001) — •Hagen W. Klemm, Gina Peschel, Ewa Madej, Alexander Fuhrich, Martin Timm, Thomas Schmidt, and Hans-Joachim Freund — Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Deutschland

The SiO₂ bilayer on Ru(0001) offers magnificent possibilities for understanding the transition from crystalline to vitreous phase[1], tuning of electronic structure, doping and catalysis[2]. In the thickness range of one to three monolayers we studied the growth of ultrathin Silica films by LEEM, LEED, XPS and XPEEM. We found that the oxidation temperature plays a crucial role for the quality of the resulting film, varying from incomplete oxidation to dewetting of the film. A special focus of our investigation was the transition from crystalline to vitreous phase, as could be clearly seen in LEED. The influence of holes in the film and the morphology of the substrate will be discussed.

[1] Lichtenstein, L. et. al., Angew. Chem. Int. Ed. 51, 404 (2012) [2] Shaikhutdinov, S. et. al., Chem. Phys. Chem. 14, 71 (2013)