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DS: Fachverband Dünne Schichten

DS 30: Topological insulators: Structure and electronic structure (HL with DS/MA/O/TT)

DS 30.6: Vortrag

Mittwoch, 18. März 2015, 16:15–16:30, ER 270

Wet etch process for HgTe nanostructure fabrication — •Kalle Bendias¹, Erwann Bocquillon¹, Alex Hughes², Christoph Brüne¹, Hartmut Buhmann¹, and Laurens W. Molenkamp¹ — ¹EP3, Physikalisches Institut, Universität Würzburg — ²Department of Physics, Stanford University

Topological insulators (TI) are a new class of material with outstanding spin properties. Grown in 2d quantum wells HgTe does not only host Quantum Spin Hall edge channels [1][2], but also a giant Rashba splitting [3]. Both could lead to numerous applications in spintronic devices. In order to perform experiments such as spininjection, -probing [3] or quantum point contact collimation [4] a high carrier mobility and i.e. a long ballistic mean free path is essential.

The conventional processing method using ion milling to define the structure strongly affects these surface properties on small microstructures. In this talk the development and results of an alternative lithography etch method using KI:I:HBr as wet etchant are presented. Measurements on microstructures will be shown, indicating comparable mobilities on big and small structures.

[1] Markus König et al., Journal of the Physical Society of Japan 77.3 (2008), S. 031007.

[2] C. Brüne et al., Nature Physics 6.6 (2010), S. 448-454.

[3] J. Hinz et al., Semiconductor science and Technology 21.4 (2006), S 501-506.

[4] L.W. Molenkamp et al., Phys. Rev. B 41, 1274 (1990)