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DS: Fachverband Dünne Schichten

DS 31: Topological insulators: Transport (HL with DS/MA/O/TT)

DS 31.5: Vortrag

Mittwoch, 18. März 2015, 12:45–13:00, ER 270

Quantum hall states equilibration in lateral heterojunctions on inverted HgTe quantum wells — •M. Reyes Calvo^1,2, Christoph Brüne³, Christopher Ames³, Philipp Leubner³, Hartmut Buhmann³, Laurens W. Molenkamp³, and David Goldhaber-Gordon¹ — ¹Department of Physics, Stanford Universtiy, Stanford, U.S.A. — ²C.I.C. Nanogune, San Sebastián, Spain — ³Physikalisches Institut (EP3), Universität Würzburg, Würzburg, Germany

We study lateral heterojunctions on HgTe quantum wells with inverted band structure. At high densities and fields, we can explore the equilibration between Quantum Hall (QH) states with different filling factor. The resulting resistance plateaus are particularly clear in the n-n'-n quadrant and fit the expected values for a 2D electron gas heterojunction. The low density and moderate magnetic field regime is of more interest, since due to the inverted band structure of HgTe, Quantum Spin Hall (QSH) edge states could be present. In this regime, we observe unexpected features in the Hall resistance, which could be associated with the interplay between chiral QH edge modes and helical QSH edge modes.