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DS: Fachverband Dünne Schichten

DS 34: Focussed Session: Oxide semiconductors I (joint session with HL)

DS 34.2: Vortrag

Donnerstag, 19. März 2015, 10:00–10:15, H 2032

Growth-Kinetics Study and Doping the Group-III Sesquioxide β-Ga2O3 — •Patrick Vogt and Oliver Bierwagen — Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5 - 7, 10117 Berlin, Germany

In the present talk, a comprehensive study of the growth-kinetics of β-Ga2O3 (-201) on Al2O3 (0001) is given. The growth was performed by plasma-assisted molecular beam epitaxy. Under ultra-high vacuum conditions atomic gallium and oxygen plasma were reacting amongst others to form β-Ga2O3. Besides the growth-kinetics studies for undoped Ga2O3 we also doped this material with tin. Under different growth conditions we investigated the carrier concentration depending on different growth parameters like growth temperature (Tgrowth) and metal fluxes, Ga and Sn flux, respectively.

This study shows the variation of the growth-rate depending on various growth-parameter such as the gallium beam equivalent pressure, Tgrowth and the oxygen flux. It turned out, that in the gallium-rich regime the formation of the volatile suboxide Ga2O reduce the growth-rate of β-Ga2O3 and result in an etching of the film when no oxygen is supplied. In order to investigate the carrier concentration of the Ga2O3 : Sn transport measurements were performed.