Berlin 2015 – scientific programme
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DS: Fachverband Dünne Schichten
DS 34: Focussed Session: Oxide semiconductors I (joint session with HL)
DS 34.3: Talk
Thursday, March 19, 2015, 10:15–10:30, H 2032
Au-Schottky contact on In2O3 single crystals — •Maryam Nazarzadehmoafi1, Christoph Janowitz1, Mattia Mulazzi1, Stephan Machulik1, Zbigniew Galazka2, and Recardo Manzke1 — 1Institut für Physik, Humboldt Universität zu Berlin, Newtonstraße 15, 12489 Berlin, Germany — 2Leibniz Institut für Kristallzüchtung, Max Born Str. 2, 12489 Berlin, Germany
Au contacts on melt-grown-In2O3 (111) single crystals were studied using angle-resolved photoemission spectroscopy to monitor the band bending by core level and valence band spectra, with correction for the photovoltage effect. The measurement was performed through stepwise Au evaporation onto the (111) surface of In2O3 at room temperature (RT) as well as low temperature (LT). A small Schottky barrier on RT-samples and a larger one on LT-samples were observed. The comparison of the experimental barrier height with the predicted one from the Schottky-Mott rule shows a discrepancy. It implies that the complexity of the atomic structure of the present metal-semiconductor interface is beyond the applicability of the Schottky-Mott rule. The results indicate that an explicit reference to the surface electron accumulation layer is not necessary when discussing the Schottky character of the Au/In2O3 contact. In addition, the results reveal the epitaxial growth of Au on In2O3 and also the chemical reaction and formation of an Au-In alloy at RT.