Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 34: Focussed Session: Oxide semiconductors I (joint session with HL)
DS 34.8: Vortrag
Donnerstag, 19. März 2015, 12:15–12:30, H 2032
Dopant clustering in p-type transparent semiconducting Cr2O3:Mg — •Karsten Fleischer, David Caffrey, Leo Farrell, Emma Norton, Daragh Mullarkey, Elisabetta Arca, and Igor V. Shvets — School of physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Ireland
We present an analysis of the Raman spectra of p-type transparent conducting Cr2O3:Mg grown by various techniques including spray pyrolysis (SP), pulsed laser deposition (PLD), molecular beam epitaxy (MBE) and reactive magnetron sputtering (RMS). The best performing films show a distinct broad range Raman signature related to defect-induced vibrational modes not seen in stoichiometric, undoped material. Our comparative study demonstrates that Raman spectroscopy can quantify unwanted dopant clustering in the material at high Mg concentrations, while also being sensitive to the Mg incorporation site. By correlating the Raman signature to the electrical properties of the films, growth processes can be optimised to give the best conducting films and the local defect structure for effective p-type doping can be studied.