Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 34: Focussed Session: Oxide semiconductors I (joint session with HL)

DS 34.9: Talk

Thursday, March 19, 2015, 12:30–12:45, H 2032

Annealing effects on electrical properties of room-temperature deposited zinc oxynitride thin films — •Anna Reinhardt, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Semiconductor Physics Group

Amorphous oxide semiconductors have attracted much attention as channel material for thin-film transistors (TFT) due to their comparatively large electron mobility (>10 cm²/Vs) achieved already by low-temperature fabrication. In order to further increase channel mobilities while maintaining the stability of oxide-based TFTs the alloying of ZnO by nitrogen was suggested [1].

We have investigated the electrical properties of semiconducting zinc oxynitride (ZnO_xN_y) thin films depending on annealing temperature and doping. Therefore we conducted annealing experiments in air and N₂ atmosphere up to 400^∘C. The ZnO_xN_y thin films were deposited on glass substrates by reactive radio-frequency magnetron sputtering of a metallic zinc target at room-temperature. Electrical properties were examined using the four-probe van der Pauw technique. The as-deposited films show n-type semiconducting behaviour with carrier concentrations of 1×10¹⁷ − 3×10¹⁸ cm⁻³ and Hall mobilities ranging from 10 to 20 cm²/Vs. With increasing annealing temperature the resistivity decreases whereas the mobility increases. In addition, possible structural changes due to annealing were analyzed using x-ray diffraction.

[1] Y. Ye et al., J. Appl. Phys., 106, 074512 (2009)