DS 34: Focussed Session: Oxide semiconductors I (joint session with HL)
Donnerstag, 19. März 2015, 09:30–12:45, H 2032
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09:30 |
DS 34.1 |
Hauptvortrag:
Growth, properties and devices of gallium-oxide-based widegap semiconductors — •Shizuo Fujuta
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10:00 |
DS 34.2 |
Growth-Kinetics Study and Doping the Group-III Sesquioxide β-Ga2O3 — •Patrick Vogt and Oliver Bierwagen
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10:15 |
DS 34.3 |
Au-Schottky contact on In2O3 single crystals — •Maryam Nazarzadehmoafi, Christoph Janowitz, Mattia Mulazzi, Stephan Machulik, Zbigniew Galazka, and Recardo Manzke
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10:30 |
DS 34.4 |
Schottky contacts and pn-heterojunctions on heteroepitaxial In2O3 thin films grown by pulsed laser deposition — •Daniel Splith, Florian Schmidt, Steffen Lanzinger, Stefan Müller, Holger von Wenckstern, and Marius Grundmann
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10:45 |
DS 34.5 |
Temperature-dependent thermal conductivity in Mg-doped and undoped β-Ga2O3 bulk-crystals — •Martin Handwerg, Rüdiger Mitdank, Zbigniew Galazka, and and Saskia F. Fischer
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11:00 |
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30 min. break.
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11:30 |
DS 34.6 |
Hauptvortrag:
BaSnO3; The next generation of transparent conducting oxide? — •David Scanlon
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12:00 |
DS 34.7 |
Nitrogen doping in tin dioxide thin film grown by chemical vapor deposition — •Jie Jiang, Yinmei Lu, Benedikt Kramm, and Bruno K Meyer
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12:15 |
DS 34.8 |
Dopant clustering in p-type transparent semiconducting Cr2O3:Mg — •Karsten Fleischer, David Caffrey, Leo Farrell, Emma Norton, Daragh Mullarkey, Elisabetta Arca, and Igor V. Shvets
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12:30 |
DS 34.9 |
Annealing effects on electrical properties of room-temperature deposited zinc oxynitride thin films — •Anna Reinhardt, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann
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