Berlin 2015 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 35: Graphen

DS 35.2: Vortrag

Donnerstag, 19. März 2015, 09:45–10:00, H 0111

Synthesis of long- range ordered crystalline Graphene by chemical vapor deposition over Iridium (111) films on Sapphire — •Arti Dangwal Pandey and Andreas Stierle — Deutsches Elektronen-Synchrotron, Hamburg, Germany

High-quality and large-area Graphene is in demand to exploit its unique physical properties for various applications, including future electronic devices and sensors. Large-area epitaxial graphene have been deposited successfully by CVD on transition metal single crystals. These substrates are of high quality, but very expensive. This drives the search for other alternatives to use cheaper substrates. Ir has low carbon solubility, and so Ir thin film is a good choice for growing Graphene on it. Only single article is published till date for preparing epitaxial graphene on single crystal Ir film. [1] We have synthesized long-range ordered crystalline Graphene over few nanometer thick Ir films deposited on sapphire. Ethylene is used as a carbon source for depositing graphene by CVD and Ir films are grown by physical vapor deposition. LEED reveals the long-range crystallinity of graphene and Ir films, and XPS measurements confirmed the high purity of Ir films. Influence of growth parameters on the quality of Ir film, and thus on Graphene, will be discussed in Detail.

[1] Chi Vo-Van et al. App. Phys. Lett. 98 (2011) 181903.