Berlin 2015 – scientific programme
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DS: Fachverband Dünne Schichten
DS 35: Graphen
DS 35.3: Talk
Thursday, March 19, 2015, 10:00–10:15, H 0111
Rotated domain network in graphene on cubic-SiC(001) — •Victor Aristov1,2,3, Alexander Chaika1,4, Olga Molodtsova2, Alexei Zakharov5, Dmitry Marchenko6, Jaime Sánchez-Barriga6, Andrei Varykhalov6, Sergey Babenkov2, Marc Portail7, Marcin Zielinski8, Barry Murphy4, Sergey Krasnikov4, Olaf Luebben4, and Igor Shvets4 — 1ISSP RAS Chengolovka, Russia — 2DESY Hamburg, Germany — 3Uni Hamburg, Germany — 4Trinity College Dublin, Ireland — 5MAX-lab Lund, Sweden — 6BESSY Berlin, Germany — 7CNRS-CRHEA Valbonne, France — 8NOVASiC Le Bourget du Lac, France
The atomic structure of the cubic-SiC(001) surface during UHV graphene synthesis has been studied using PES, STM and LEED. The studies prove the synthesis of a uniform, millimeter-scale graphene overlayer consisting of nanodomains rotated by *13.5o relative to the <110>-directed boundaries. The preferential directions of the domain boundaries coincide with the directions of carbon atomic chains on the SiC(001)-c(2x2) reconstruction, fabricated prior to graphene synthesis. The presented data show the correlation between the atomic structures of the SiC(001)-c(2x2) surface and the graphene /SiC(001) rotated domain network and pave the way for optimizing large area graphene synthesis on low cost cubic SiC(001)/Si(001) wafers. Acknowledgments: This work was supported by the RAS, RFBR grants No 140200949 and 140201234, by the BMBF-Project No. 05K12GU2, PSP-Element No. U4606BMB1211, by a Marie Curie IIF grant No 12/IA/1264, by SPP 1459 of DFG.