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DS: Fachverband Dünne Schichten
DS 35: Graphen
DS 35.7: Talk
Thursday, March 19, 2015, 11:00–11:15, H 0111
Doping of graphene on SiO2 with N+ and B+ ions by low-energy ion irradiation. — •Steffen Weikert, Julian Alexander Amani, and Hans Christian Hofsäss — II. Physikalisches Institut, Georg-August-Universität Göttingen, Deutschland
Its unique electrical properties make graphene a promising candidate for future electronic devices. An important milestone, especially for the industrial production of those devices, is the realization of a method for large-scale doping of graphene. A potential method for controlled doping of graphene, while minimizing the damage inflicted upon the sample, is low-energy ion irradiation.[1−3]
This work shows experiments on the irradiation of monolayer graphene on SiO2 by N+ and B+ ions at 25 eV. For the experimental realization a mass-selected ion beam deposition system was used. [4] The irradiation was also simulated using the Monte Carlo program SDTrimSP. In addition to the irradiation of the graphene, I-V measurements were made before and after the irradiation.
[1] U. Bangert, W. Pierce, D. M. Kepaptsoglou, Q. Ramasse, R. Zan, M. H. Gass, J. A. Van den Berg, C. B. Boothroyd, J. Amani, and H. C. Hofsäss, Nano Lett. 2013, 13, 4902-4907.
[2] E. H. Åhlgren, J. Kotakoski, and A. V. Krasheninnikov, Phys. Rev. B (2011), 83, 115424.
[3] Y. Xu, K. Zhang, C. Brüsewitz, X. Wu, and H. C. Hofsäss, AIP Advances (2013), 3, 072120.
[4] H. Hofsäss, H. Binder, T. Klumpp and E. Recknagel, Diam. Relat. Mater. (1994), 3, 137.