Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Poster Session I
DS 36.103: Poster
Donnerstag, 19. März 2015, 09:30–12:00, Poster A
Field effect transistors with a BiFeO3/Si3N4 gate — •Kefeng Li1, Tiangui You1, Tim Kaspar1, Nan Du1, Danilo Bürger1, Ilona Skorupa1, Thomas Mikolajick2, Oliver G. Schmidt1,3, and Heidemarie Schmidt1 — 1Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer Strasse 70, D-09107 Chemnitz, Germany — 2Namlab gGmbH, Noethnitzer Strasse 64, 01187 Dresden, Germany — 3Institute for Integrative Nanosciences, IFW-Dresden, Helmholtz Strasse 20, D-01069 Dresden, Germany
The nonvolatile ferroelectric memory field effect transistor has many advantages such as random access, high speed, low power, high density, and non-destructive reading operation [1]. Its memory properties can be tailored using a gate stack of dielectrics and ferroelectric films [2]. Nonvolatile resistive switching in BiFeO3 (BFO) has attracted much attention [3] and has been attributed to flexible barriers [4]. In this work, field effect transistors with a BFO/Si3N4 gate stack have been fabricated and the output characteristics are discussed in dependence on the nonvolatile capacitive switching in the BFO/Si3N4 gate. [1] O. Auciello, J.F.Scott, R. Ramesh, Physics Today, 51,22 (1998) [2] J. T. Evans and R. Womack, IEEE J. Solid-State Circuits. 23, 1171(1988) [3] Y. Shuai, S. Zhou, D. Bürger, M. Helm, and H. Schmidt, J. Appl. Phys., 109, 124117 (2011) [4] T. You, N. Du, S. Slesazeck, T. Mikolajick, G. Li, D. Bürger, I. Skorupa, H. Stöcker, B. Abendroth, A. Beyer, K. Volz, O. G. Schmidt, H. Schmidt, ACS Appl. Mater. Interfaces, 6, 19758 (2014)