Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Poster Session I

DS 36.108: Poster

Thursday, March 19, 2015, 09:30–12:00, Poster A

Synthesis of TiS₂ Thin Films Based on Atomic Layer Deposition — •Jana von Poblotzki, Johannes Gooth, Lewis Akinsinde, Robert Zierold, and Kornelius Nielsch — Institute of Nanostructure and Solid State Physics, Universität Hamburg, Hamburg, Deutschland

Transition metal dichalcogenides (TMDCs) are layered materials, which have a strong horizontal and a weak layer-to-layer (van der Waals) interaction. Monolayers of TMDCs can be semiconducting and show high electrical mobility and low effective masses of the charge carriers. Recently, the synthesis of TiS₂ thin films is gaining attention because of their promising thermoelectric properties. In the future TiS₂ could become a very important material choice to replace already existing and popular materials such as Bi₂Te₃, Sb₂Te₃, and Bi₂Se₃.

Two different synthesis approaches of TiS₂ are explored: First, TiO₂ anatase thin films of less than 20 nm thickness were prepared by atomic layer deposition (ALD), thermally annealed to modify the crystalline structure of the samples, and subsequently sulfurized through vapor of CS₂ in a tube furnace. Second,the new precursor combination titanium(IV) isopropoxide and bis(trimethylsilyl)sulfide was tested for direct atomic layer deposition of TiS₂. The temperature range in which these ALD processes proceed allows the use of standard photolithography to obtain micron-sized measurement structures. Such devices are utilized to determine the (thermo)electric transport properties of these films.