Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Poster Session I

DS 36.10: Poster

Thursday, March 19, 2015, 09:30–12:00, Poster A

Epitaxial Ge2Sb2Te5 thin films on Silicon Substrate by Pulsed Laser Deposition — •Isom Hilmi, Erik Thelander, Jürgen Gerlach, Philipp Schumacher, Dietmar Hirsch, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e. V., 04318 Leipzig

Ge-Sb-Te based material is one of the most widely investigated phase change materials (PCM) for the data storage application. Recently, the more oriented crystalline state of GST-based PCM storage device has been shown having lower switching energy. Further result showed that epitaxial Ge-Sb-Te films in highly ordered atomic arrangement has been achieved using MBE, although there is a severe limitation regarding the deposition rate. Pulsed Laser Deposition (PLD) offers high rate deposition, and has been successfully employed for deposition Ge2Sb2Te5 (GST), which is interesting for industrial point of view.

Thin films of Ge2Sb2Te5 (GST) have been deposited on single crystal Si(111) substrate by means of PLD, over a substrate temperature range from room temperature to ~300°C. The crystallinity and epitaxial content of the films were then analyzed using x-ray diffraction based methods and their surface topographies were studied using AFM. At low substrate temperatures strongly textured hexagonal (0001) orientated polycrystalline films are obtained. At higher substrate temperatures epitaxial films forms. At temperatures in the near of 300°C, loss of Ge and Te was also found which resulted in a shift in composition from Ge2Sb2Te5 to Ge1Sb2Te4. In conclusion, PLD can be used to deposit high quality epitaxial Ge-Sb-Te layers on Si(111) substrates.