Berlin 2015 – scientific programme
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DS: Fachverband Dünne Schichten
DS 36: Poster Session I
DS 36.14: Poster
Thursday, March 19, 2015, 09:30–12:00, Poster A
Preparation and Characterization of H2S-Sensors based on Cu2O deposited by RF-sputtering — •Christian Kandzia1, Philipp Hering1, Jörg Henemann2, Angelika Polity1, Bruno Meyer1, and Brend Smarsly2 — 11.Physikalisches Institut, Justus Liebig Universität Gießen, Heinrich-Buff-Ring 16 — 2Physikalisch-Chemisches Institut, Justus-Liebig Universität Gießen, Heinrich-Buff-Ring 58
Cuprite (Cu2O) is an oxide-semiconductor with a direct band gap of 2.1 eV. It can be used for example as a sensor element for H2S-Gas exposure. For this purpose, thin films were deposited by RF-sputtering on c-sapphire and quartz-glass heated at 650 ∘C to provide good film-quality. During the sputtering process different amounts of hydrogen were added, which have effects on the morphology. These sensors were aerated with a gasmixture of synthetic air and H2S. After exposure the material reacts to CuxS which has a significantly higher conductivity. It is found that the conductivity increase is due to percolation paths on the surface. This switching threshold is investigated dependent on the surface-morphology. Beside the samples were investigated by XRD-, SEM-, transmission- and Hall-measurements.