Berlin 2015 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 36: Poster Session I
DS 36.15: Poster
Thursday, March 19, 2015, 09:30–12:00, Poster A
Frequency dependent measurements of Ta2O5 and BaTiO3-based memristors — •Lauritz Schnatmann, Norman Shepheard, Stefan Niehörster, Savio Fabretti, and Andy Thomas — Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Germany
Memristors can be used to develop new computer components and increase the efficiency of computers. With this new component computers might be able to learn even without complex programming.
We investigated thin memristive tunneling barriers of BaTiO3 and Ta2O5. Beside a conventional i-v transport measurements, we carried out the frequency dependent measurements. Further, we varied the amplitude and investigated the different switching behaviors of our tunneling systems. For our measurements we chose frequencies from 0.006 mHz up to 2 mHz and amplitudes from 150 mV up to 325 mV.
Chua et al. [1] predict the switching behavior in 1976. He described the change of the switching behavior with frequency variation.
Another point of view gives the theory by Pershin and Di Ventra [2]. Memristors can be distinguished in two different types. The two types show different behaviors at the 0V point in the hystereses loops, which is found for Ta2O5 and BaTiO3, respectively.
[1] Chua et al. ’memristive devices and systems’, Proceedings of the IEEE, 64, 209-223, 1976
[2] Yuriy V Pershin and Massimiliano Di Ventra ’Memory effects in complex materials and nanoscale systems’, Advances in Physics, 60, 145-227, 2011