Berlin 2015 – scientific programme
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DS: Fachverband Dünne Schichten
DS 36: Poster Session I
DS 36.17: Poster
Thursday, March 19, 2015, 09:30–12:00, Poster A
Combined threshold and memory resistive switching in Pt/Nb2O5/Ti/Pt crossbar structures obtained from amorphous Nb2O5 thin films — •Carsten Funck, Nabeel Aslam, Stephan Menzel, Eike Linn, and Susanne Hoffmann-Eifert — Peter Grünberg Institut (PGI-7) and JARA-FIT, Forschungszentrum Jülich, 52425 Jülich, Germany
Redox-based resistive switching memory cells (ReRAM) are intensively studied due to their potential to fulfill the increasing demands of future information technology. ReRAM can be realized in passive crossbar arrays, representing the highest integration density. Unfortunately, the leakage current through unselected cells limits the selectivity and the maximum size of the array. Therefore, selector elements are required to overcome this sneak path problem. ReRAM cells based on niobium oxide allow the integration of selector and memory element in one cell. Nb2O5 is an insulator allowing for VCM-type resistive switching while NbO2 shows a temperature induced metal-insulator transition resulting in a negative differential resistance. The corresponding threshold switching behavior is a volatile resistance change which can used as a highly non-linear selector. Pt/Nb2O5/Ti/Pt crossbar structures are fabricated from amorphous Nb2O5 layers grown by atomic layer deposition. Tuning of the electrical stimuli during electroforming and resistive switching enables a control of the fraction of volatile threshold and non-volatile memory switching. An empirical model of the switching behavior is presented and first results from a finite element simulation of the threshold behavior.