Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Poster Session I
DS 36.18: Poster
Donnerstag, 19. März 2015, 09:30–12:00, Poster A
Growth of VO2 thin films by low-oxygen MAD: influence of O2-background — •Sven Esser, Victor Pfahl, Sebastian Hühn, Markus Michelmann, and Vasily Moshnyaga — 1. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
A possible candidate for a fast optical switch (FOS) is VO2 with structural phase transition at 340 K and coupled metal insulator transition (MIT) with a resistivity change by 3-4 orders of magnitude [1,2]. MIT can also be driven quasi optically, which opens the possibility for application as FOS [3].
Due to several possible oxidation states of vanadium, different vanadium oxides (VO, V2O3, VO2, V2O5, ... [4]) can be prepared. For high quality films of definite composition a precise control of the oxygen background during preparation is necessary.
We report the growth of epitaxial VO2 and V2O3 thin films on Al2O3 substrates by controlling the chamber pressure with LO-MAD technique. The thin films were characterised by x-ray diffraction and by scanning tunneling microscopy. Resistivity measurements reflect the influence of the O2-background on the shape and position of the MIT.
This work is supported by the German Science Foundation through SFB 1073, TP B04.
[1] V. Eyert, Ann. Phys. (Leipzig) 11, 650-702 (2002)
[2] H.S. Choi et al., Phys. Rev. B 54, 4621 (1996)
[3] S. Chen et al., Infra. Phys. & Techn. 45, 239-242 (2004)
[4] A. Stork, Dissertation, TU Berlin (2011)