Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Poster Session I

DS 36.41: Poster

Thursday, March 19, 2015, 09:30–12:00, Poster A

Topography evolution of Germanium deposited by Pulsed Laser Deposition — •Philipp Schumacher, Erik Thelander, Isom Hilmi, Jürgen Gerlach, and Bernd Rauschenbach — Leibniz Institute of Surface Modification, 04318 Leipzig, Germany

Pulsed Laser Deposition is a versatile technique to deposit high quality films of nearly all materials. In order to promote this technique and expand its application it is necessary to increase the understanding of growth mechanisms, the influence of process parameters like the pulse frequency or the pulse energy and the influence of the substrate and its roughness.

In this work, germanium thin films have been deposited on single crystal Ge and Si (100) substrates as well as on mica surfaces by PLD. The topography of the surface is investigated by Atomic Force Microscopy (AFM) to evaluate the scaling behavior of the roughness under different deposition conditions as well as the size and the density of islands.

The roughness evolution is shown to be governed by the Kardar-Parisi-Zhang-equation and at significant temperature by the Mullins diffusion equation. For low film thickness the roughness decreases due to a diffusion term and for higher film thickness a roughening term becomes dominant. The presence of growing structures with growing distance has also been shown by analyzing the Height-Height Correlation of the topography.