Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Poster Session I

DS 36.42: Poster

Thursday, March 19, 2015, 09:30–12:00, Poster A

Crystalline Silicon on Glass by Steady-State Solution Growth — •Roman Bansen, Christian Ehlers, Jan Schmidtbauer, Franziska Ringleb, Thomas Teubner, and Torsten Boeck — Leibniz Institute for Crystal Growth, Berlin, Germany

In order to grow crystalline silicon on glass at low temperatures for photovoltaic applications, a two-step process has been developed. In the first step, nanocrystalline Si films are formed at low temperatures in the range of 300 to 450 °C through either metal-induced crystallization, or direct deposition on heated substrates.

In the second step, the seed layers serve as templates for the growth of crystalline silicon by steady-state solution growth. In contrast to common liquid phase epitaxy, the supersaturation in front of the seed layer is established by a stationary temperature difference between a silicon source and the substrate. Micrometer-sized Si crystallites with low impurity concentrations are grown by this technique.

Essential features of steady-state solution growth are compatible with the float glass process in large-scale industrial glass production, which raises hopes for a successive production of glass and silicon films for thin-film solar cells in a continuous process.