Berlin 2015 – scientific programme
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DS: Fachverband Dünne Schichten
DS 36: Poster Session I
DS 36.4: Poster
Thursday, March 19, 2015, 09:30–12:00, Poster A
Growth Study of the Ternary Compound Sn1Bi2Te4 via UHV DC Magnetron Sputter Deposition — •Juri Banchewski1, Felix R.L. Lange1, Tobias Schäfer1, Jonas Huyeng1, Stefan Jakobs1, and Matthias Wuttig1,2 — 11.Physikalisches Institut (IA), RWTH Aachen University, Germany — 2JARA - Fundamentals of Information Technology, RWTH Aachen University, Germany
The development of high-speed optical data storage and non-volatile memory has gained increasing attention in the last decades. Allowing a switching mechanism between structural phases on a nanosecond timescale, Phase Change Materials (PCM) are some of the most promising materials for future data storage applications [1]. Stoichiometric compounds like the pseudo-binary Ge1Sb2Te4 with an additive Sn1Bi2Te4 alloy have already been tested and proved to show enhanced crystallization kinetics [2]. Both constituents exhibit an amorphous, a metastable cubic and a stable hexagonal phase dependent on growth parameters and post-treatment. In terms of optimizing device parameters, full control of structural ordering is essential.
Here, we have performed a growth study of Sn1Bi2Te4 on mica and silicon by DC magnetron sputter deposition under UHV conditions. The growth was carried out at elevated substrate temperature in order to investigate the structural and morphological evolution of the alloy.
[1] Matthias Wuttig and Noboru Yamada. Nature Materials 6, 824-832 (2007)
[2] Tae-Yon Lee and Ki-Bum Kim. Appl. Phys. Lett. 80, 3313 (2002)