Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Poster Session I

DS 36.68: Poster

Thursday, March 19, 2015, 09:30–12:00, Poster A

Resolution limits of ohmic simulations for proton beam writing in p-GaAs — •Alrik Stegmaier, Tristan Koppe, Charlotte Rothfuchs, Ulrich Vetter, and Hans Hofsäss — 2. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

Microelectromechanical systems (MEMS) combine electrial and mechanical features on the micrometer scale. An increasing number of applications for this technology exist, including energy harvesters, accelerometers and pressure sensors [1,2]. Proton beam writing is a maskless lithographic method for the production of microstructures for such applications [3]. It is possible to produce three dimenstional structures by varying only the fluence of the proton irradiation on a p-GaAs sample, followed by electrochemical etching [4].

High precision and reproducability of the final structures requires accurate simulations of the effects of proton irradiation and the subsequent electrochemical etching. The simplest approach for such simulations is an ohmic model [5]. The resolution limits of such a model are explored and extended. The model is also adjusted with non-ohmic elements to reproduce the experimentally measured I-V characteristics.

[1] V. Cimalla et al., J. Phys. D: Appl. Phys., 40(20), 6386, 2007

[2] J.A. Paradiso et al., IEEE Pervasive Comput., 4(1), 18-27, 2005

[3] J.A. van Kan et al., Appl. Phys. Lett., 83(8), 1629, 2003

[4] P. Mistry et al., Nucl. Instr. Meth. Phys. Res. B, 237, 188-192, 2005

[5] T. Koppe et al., J. Microelectromech. Syst., 23(4), 955-960, 2014