Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Poster Session I

DS 36.69: Poster

Thursday, March 19, 2015, 09:30–12:00, Poster A

Drift diffusion model for proton beam writing in p-GaAs — •Alrik Stegmaier, Tristan Koppe, Charlotte Rothfuchs, Ulrich Vetter, and Hans Hofsäss — 2. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

Microelectromechanical systems (MEMS) are micrometer scale systems that combine electrial and mechanical functionality for applications like energy harvesters, accelerometers and pressure sensors [1,2].

Proton beam writing (PBW) is a relatively new, maskless lithographic method for the production of microstructures for such applications [3]. It has been shown that it is possible with PBW to produce 3D structures by varying only the fluence of the proton irradiation on a p-GaAs sample, followed by electrochemical etching [4].

Optimization of the resolution of PBW in p-GaAs requires precise models of the irradiation and etching process. Progress has been made in the past with ohmic simulations of the process [5]. Here a drift-diffusion model for the semiconductor material, together with an empirical model for proton irradiation induced defects and a model for the surface electrochemistry is presented.

[1] V. Cimalla et al., J. Phys. D: Appl. Phys., 40(20), 6386, 2007

[2] J.A. Paradiso et al., IEEE Pervasive Comput., 4(1), 18-27, 2005

[3] J.A. van Kan et al., Appl. Phys. Lett., 83(8), 1629, 2003

[4] P. Mistry et al., Nucl. Instr. Meth. Phys. Res. B, 237, 188-192, 2005

[5] T. Koppe et al, J. Microelectromech. Syst., 23(4), 955-960, 2014