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DS: Fachverband Dünne Schichten

DS 36: Poster Session I

DS 36.6: Poster

Donnerstag, 19. März 2015, 09:30–12:00, Poster A

Investigation of the crystallization kinetics in the amorphous phase change material GeTe — •Julian Pries¹, Julia Benke¹, Manuel Bornhöfft², Joachim Mayer^2,3,4, and Matthias Wuttig^1,3 — ¹1. Physikalisches Institut IA, RWTH Aachen University, 52074 Aachen, Germany — ²GFE, RWTH Aachen University, 52074 Aachen, Germany — ³JARA-FIT, RWTH Aachen University, 52056 Aachen, Germany — ⁴ER-C, FZJ, 52425 Jülich, Germany

Phase change materials are a group of materials which are able to be switched between the amorphous high resistive, low reflective state and the crystalline low resistive, high reflective state rapidly. This makes them potential candidates for memory applications such as non-volatile RAM. The amorphization can be done on a very short timescale compared to the more time consuming recrystallization. In order to speed up the data writing and erasing rate in a memory device, a better understanding of the recrystallization speed is essential.

Therefore, thin film GeTe samples were prepared and heated in order to induce crystal grains. After heating, the samples were investigated by a Transmission Electron Microscope (TEM) to measure the size of crystalline grains. From alternating heating and TEM measurements, we could determine crystal growth velocities.