Berlin 2015 – scientific programme
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DS: Fachverband Dünne Schichten
DS 36: Poster Session I
DS 36.7: Poster
Thursday, March 19, 2015, 09:30–12:00, Poster A
Electrical Properties of Textured Thin Films of the Phase Change Material GeSb2Te4 — •Enno Bröring1, Tobias Schäfer1, Felix R. L. Lange1, Hanno Volker1, and Matthias Wuttig1,2 — 11. Physikalisches Institut (IA), RWTH Aachen University, Germany — 2JARA - FIT, RWTH Aachen, Germany
Phase change materials (PCM) are an interesting sub-class of chalcogenides with unique properties. The material can be switched between the amorphous und crystalline state within nanoseconds. Both phases are stable at ambient conditions and differ in their optical and electrical properties. Therefore the materials are of big interest for data storage (e.g. solid state memories). The amorphous state shows an insulating behaviour with a high resistance while the resistance of the crystalline state is orders of magnitude smaller. The crystalline state shows unique features like resonant bonding and disorder induced localization (Anderson localization). Former studies have shown a metallic as well als insulating behaviour for the crystalline state. These measurements were focused on highly disordered polycrystalline films.
Here we present the electrical properties of textured GeSb2Te4 phase change films. The material is sputter deposited on different heated substrates to achieve a close to epitaxial growth leading to lower disorder. The quality of the textured films is measured by x-ray diffractrometry. The influence of texture on the electrical properties is determined via low temperature transport measurments.