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Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Poster Session I

DS 36.8: Poster

Thursday, March 19, 2015, 09:30–12:00, Poster A

Chalcogenide Superlattices (CSL) for Energy Efficient Data Storage by Magnetron Sputtering — •Felix Lange1, Jamo Momand2, Henning Hollermann1, Juri Banchewski1, Stefan Jakobs1, Andrea Redaelli3, Enrico Varesi3, Bart J. Kooi2, and Matthias Wuttig1,411.Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany — 2Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands — 3Micron Semiconductor Italia, Process R&D, Agrate Brianza, Italy — 4JARA - Fundamentals of Information Technology, RWTH Aachen University, 52056 Aachen, Germany

Phase change materials (PCM), as a sub-group of the chalcogenides, have already been extensively used in rewritable optical data storage (e.g. CD-RW). Since they combine scalability and fast switching speed with low power consumption, they are nowadays traded as promising candidates for next-generation memory, most suitable for mobile applications. Only recently it has been proposed, that the performance could be even enhanced, by using superlattices of GeTe and Sb2Te3 instead of just bulk (Sb2Te3)x(GeTe)y (GST). It is argued that in this case, the change in electrical resistivity would be realized by a change in atomic coordination of Germanium at the interfaces only. Here we explore the feasibility to grow highly textured thin alternating layers of GeTe and Sb2Te3 using DC magnetron sputter deposition by using X-ray diffraction and transmission electron microscopy (TEM) techniques.

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