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DS: Fachverband Dünne Schichten

DS 36: Poster Session I

DS 36.89: Poster

Donnerstag, 19. März 2015, 09:30–12:00, Poster A

Modification of resistive switching of TiO₂ by noble gas ion implantation — •Solveig Rentrop¹, Barbara Abendroth¹, Wolfram Münchgesang¹, Juliane Walter¹, Jura Rensberg², Hartmut Stöcker¹, and Dirk C. Meyer¹ — ¹TU Bergakademie Freiberg, Deutschland — ²Friedrich-Schiller-Universität Jena, Deutschland

Ion beam modification is one of the possible routes to specifically modify resistive switching characteristics of metal-insulator-metal (MIM) capacitor structures for future non-volatile random access memories. The effects of noble gas ion implantation on structural, optical and electrical properties were investigated for TiO₂-based MIM devices, as TiO₂ is one of the most studied and well known binary dielectric for resistive switching.

Here, we used TiN-TiO₂-Au devices with oxide layer thickness ranging from 16-44 nm. TiO₂ layers are deposited by atomic layer deposition and are either amorphous or crystalline in the anatase phase. Ion implantation of Kr⁺ at 28-40 keV was applied to induce structural modifications within the oxide layer leading to full amorphisation of anatase layers for fluences of F = 1 x 10¹⁵ ions/cm². We demonstrate stable and reproducible non-volatile switching behaviour for as deposited amorphous TiO₂ and the change in resistive switching parameters such as R_ON/OFF ratio and current compliance induced by ion implantation and in dependence on the ion fluence. Volatile switching with a very high R_ON/OFF ratio of 946 was found for anatase layers after ion implantation using small fluences of F = 1 x 10¹³ ions/cm².