Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Poster Session I
DS 36.91: Poster
Donnerstag, 19. März 2015, 09:30–12:00, Poster A
Formation of hybrid Ge:Mn structures during flashlamp annealing — •Danilo Bürger1, Stefan Baunack2, Jürgen Thomas2, Daniel Blaschke3, Thomas Schumann3, Shengqiang Zhou3, Oliver G. Schmidt1,2, and Heidemarie Schmidt1 — 1Material Systems for Nanoelectronics, Chemnitz University of Technology — 2Institute for Integrative Nanosciences, IFW Dresden — 3Institute of Ion Beam Physics and Materials Research, Helmholtz-
The formation of ordered hybrid structures opens the way to several applications, e.g. in the field of nanoimprint lithography and solar cell processing [1]. The formation of hybrid Ge:Mn structures by pulsed laser annealing of Mn-implanted Ge wafers has already been experimentally verified [2]. In this work, we co-sputtered Germanium and Manganese to produce amorphous GeMn-films with an initial homogenous Mn distribution on a (001)-Ge substrate. Afterwards, flashlamp annealing on the ms-timescale has been performed to crystallize the Ge:Mn films. Transmission electron microscopy reveal a polycrystalline structure and an inhomogenous Mn-distribution. Magnetotransport measurements indicate that the secondary Mn-rich phases do not form a percolating Mn-rich nanonet as known from pulsed laser annealed Mn-implanted Ge [2]. Furthermore, systematic investigations on annealed, co-sputtered Ge:Mn films with different Mn concentration will be presented. The project was supported by the DFG, project BU 2956/1-1. [1] Optics Express 21, A60-A76 (2013), [2] APL 100, 012406 (2012)