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DS: Fachverband Dünne Schichten

DS 37: Focussed Session: Oxide semiconductors II (joint session with HL)

DS 37.10: Hauptvortrag

Donnerstag, 19. März 2015, 18:00–18:30, H 2032

Synthesis and Stability of Indium (III) Oxide Polymorphs — •Aleksander Gurlo and Maged Bekheet — Fachgebiet Keramische Werkstoffe, Technische Universität Berlin, Fakultät III Prozesswissenschaften, Institut für Werkstoffwissenschaften und -technologien, Sekr. BA3, Hardenbergstraße 40, 10623 Berlin, Germany

In our presentation the synthesis, stability and properties of binary indium oxides will be addressed. Our recent works deal with the synthesis and characterization of the known and new polymorphs in indium-oxygen system. In this way (i) a new orthorhombic In2O3 polymorph has been synthesized under high-pressure high-temperature conditions and recovered to ambient pressure and temperature, (ii) the metastability of corundum-type In2O3 have been proved both theoretically and experimentally, (iii) new sol-gel methodologies to synthesize high pressure In2O3 polymorphs under ambient pressure conditions have been developed, (iv) the stabilisation of pseudo-cubic {012} morphology in corundum-type In2O3 over several length scales have been verified, (v) the mobility and carrier concentration of well-defined corundum- and bixbyite-type In2O3 nanocrystals have been measured at different temperatures and in different gas atmospheres, (vi) a synthetic methodology for hierarchically organized hollow spheres has been developed, (vii) the crystallization of bixbyite-type In2O3 has been proven using in-situ time-resolved synchrotron radiation, and (viii) the stabilization of high-pressure corundum-type In2O3 polymorph in nanocrystals have been explained.