Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 38: Phase change/ resistive switching
DS 38.11: Vortrag
Donnerstag, 19. März 2015, 17:45–18:00, H 0111
Reversible Changes Induced by Liquid Electrolyte Gating in the WO3 Electronic Structure — •Carlos E. ViolBarbosa1, Julie Karel1, Simone G. Altendorf2, Janos Kiss1, Yuki Utsumi1, Mahesh G. Samant2, Liu Hao Tjeng1, Claudia Felser1, and Stuart S. P. Parkin2 — 1Max-Planck-Institut für Chemische Physik fester Stoffe, Dresden, Germany 01187 — 2IBM Almaden Research Center, San Jose, California, USA 95120
Tungsten trioxide (WO3) is a d0 transition metal oxide that has attracted broad interest due its optical and electrical properties. WO3−x has a rich phase diagram. Many of the studies in this material make use of modifications in the carrier concentration by chemical doping or creation of oxygen deficiencies. In this work, we utilize ionic liquid electrolyte gating in a electric-double-layer transistor device to induce a metallic state in WO3 films, a process we will show is reversible.
The modifications in the electronic structure (core levels and valance band) resulting from the gating are probed by hard X-ray photoelectron spectroscopy. Electrolyte gating leads to a significant population of W 5d states in the conduction band and an enormous change in the W 4f core levels. Ab initio density functional theory are used to help describe the origin of these modifications in the electronic structure.