Berlin 2015 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 38: Phase change/ resistive switching

DS 38.12: Vortrag

Donnerstag, 19. März 2015, 18:00–18:15, H 0111

Resistive switching of polycrystalline, multiferroic YMnO₃ thin films — •Agnieszka Bogusz^1,2, Sławomir Prucnal¹, Daniel Blaschke¹, Ilona Skorupa¹, Danilo Bürger², Oliver G. Schmidt^2,3, and Heidemarie Schmidt² — ¹Institute Of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf — ²Department of Materials for Nanoelectronics, Chemnitz University of Technology — ³Institute for Integrative Nanosciences, IFW-Dresden

Resistive switching (RS) phenomena have been widely investigated in the field of materials science, physics, and electrical engineering in the past decade. Recently, multiferroics have been considered as promising candidates for memristive switches. Specific properties of multiferroics might bring additional and/or new functionalities into the memristive switches. This work investigates the RS properties of multiferroic YMnO₃ thin films reported as a unipolar resistive switch [1]. YMnO₃ was grown at 400^∘C on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition (PLD) and crystallized by flash lamp annealing (FLA). Film thickness and the concentration of point defects were controlled during the PLD process. Transport and RS properties of Au/YMnO₃/Pt/Ti/SiO₂ structures were determined by two-point probe measurements in a top-bottom configuration. Results imply that the filamentary, unipolar RS in YMnO₃ originates from the electro-redox reactions induced by the Joule heating. [1] A. Bogusz et al.,AIP Advances 4, 107135 (2014)