Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 38: Phase change/ resistive switching
DS 38.13: Vortrag
Donnerstag, 19. März 2015, 18:15–18:30, H 0111
Kinetic Monte-Carlo simulations of resistive switching in silver doped titanium dioxide thin films — Sven Dirkmann1, Jan Trieschmann1, Mirko Hansen2, Martin Ziegler2, Hermann Kohlstedt2, and •Thomas Mussenbrock2 — 1Ruhr-Universität Bochum, Lehrstuhl für Theoretische Elektrotechnik, 44780 Bochum — 2Christian-Albrechts Universität zu Kiel, AG Nanoelektronik, 24143 Kiel
Low power consumption, low frabrication costs, fast write and read cycles, and scalability into the nanometer range make resistive switching devices attractive for future non-volatile memory applications and neuromorphic circuits. The majority of devices rely on nano-ionic mechanisms – one of which is electrochemical metallization, where the change in resistance is due to the formation and re-formation of conducting filaments. This contribution is devoted to demonstrate and discuss the formation and re-formation of Ag filaments in an Ag/TiO2/Pt sandwich-like thin film system at experimental time-scales by means of kinetic Monte-Carlo simulations. It is shown that filamentary electrochemical metalization devices provide distinct and reliable “on” and “off” states, but their dynamic range is limited.