Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 39: Poster Session II

DS 39.14: Poster

Donnerstag, 19. März 2015, 16:00–18:30, Poster F

Recombination of charge carriers on nano-interfaces — •Jȩdrzej Szmytkowski — Faculty of Applied Physics and Mathematics, Gdańsk University of Technology, Gdańsk, Poland

It is well known that the recombination of charge carriers plays a key role in the decreasing of efficiency for photovoltaic cells. The interfaces between nanostructures can be considered as the recombination centers. In this work, the role of tail and deep states on the process of interface recombination has been demonstrated. In order to analyze this effect, the disordered materials described by the double-exponential density of states (DOS) have been assumed. The studies of concentration effect on the time of recombination have been performed. Additionally, we report on the influence of temperature on the increasing of recombination order.