Berlin 2015 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 39: Poster Session II

DS 39.32: Poster

Donnerstag, 19. März 2015, 16:00–18:30, Poster F

Identification of the weakest mechanical point in OPV devices — •Aurélien Tournebize¹, Alberto Gregori², Stefan Schumann³, Andreas Elschner³, Christine Dagron-Lartigau², Roger C. Hiorns⁴, Ahmed Allal², Heiko Peisert¹, and Thomas Chassé¹ — ¹Institut für Physikalische und Theoretische Chemie, Tübingen, Germany — ²EPCP, IPREM (UMR-5254), Université de Pau et des Pays de l'Adour, France — ³Heraeus Precious Metals GmbH & Co. KG, Electronic Materials Division, Leverkusen, Germany — ⁴CNRS, EPCP, IPREM (UMR-5254), Pau, France

While the electrical failure mechanisms in organic photovoltaic (OPV) devices have been thoroughly investigated, little is known about their mechanical stability, which is as important and critical to ensure long term reliability. In this study, a new set-up has been developed for the so-called probe using an inverted structure glass/ITO/ZnO/P3HT:PCBM/PEDOT:PSS/Ag. The technique has been extended varying low bandgap polymers for the active layer in combination with two different PEDOT:PSS formulations. After mechanical tests, the upper and lower surfaces have been characterized by AFM and XPS to locate the fracture point. A difference in the stress at break for devices made with different combinations of active and hole transporting layers is visible, suggesting different fracture paths. Acknowledgments The research leading to these results has received funding from the European Union Seventh Framework Programme (FP7/2011 under grant agreement ESTABLIS n° 290022).