Berlin 2015 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 39: Poster Session II

DS 39.4: Poster

Donnerstag, 19. März 2015, 16:00–18:30, Poster F

Reactive Metal/Organic Interfaces Studied with HAXPES and Nanojoule Calorimetry — •Han Zhou¹, Hans-Jörg Drescher¹, Min Chen¹, Benedikt Klein¹, Claudio Krug¹, Malte Zugermeier¹, Malte Sachs¹, Stefan Kachel¹, Mihaela Gorgoi², and J. Michael Gottfried¹ — ¹Fachbereich Chemie, Philipps Universität Marburg, Hans-Meerwein-Straße 4, 35032 Marburg, Germany — ²Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany

Metal/organic interfaces are of the critical importance to the performance of modern organic semiconductor devices. Besides the idealized model systems with an atomically abrupt and chemically inert interface, more realistic systems with the formation of extended diffusion and reaction zones between metal and organic phase must be considered. These extended interfaces required bulk sensitive methods such as Hard X-ray Photoelectron Spectroscopy (HAXPES) and Nanojoule Calorimetry for investigation. Here, we report on the interfaces between (a) Ca and sexithiophene (6T) and (b) Co and tetraphenylporphyrin (2HTPP), two model systems in which interface reactions were observed. Ca in contact to 6T forms CaS, resulting in massive structural changes of the organic semiconductor. In contrast, the reaction of Co with 2HTPP is much more specific and leads to the formation of the complex CoTPP as a well-define product. Depth profiling with HAXPES and complementary studies provide a comprehensive picture of the chemical and electronic structure of the interfaces.