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DS: Fachverband Dünne Schichten

DS 4: Thin Film Characterisation II: Structure Analysis and Composition

DS 4.1: Vortrag

Montag, 16. März 2015, 15:00–15:15, H 0111

Ferromagnetic InMnAs with perpendicular magnetic anisotropy synthesized by ion implantation — •Ye Yuan^{1, 3}, Muhammad Khalid¹, Yutian Wang^{1, 3}, Eugen Weschke², Carsten Baehtz¹, Wolfgang Skorupa¹, Manfred Helm^{1, 3}, and Shengqiang Zhou¹ — ¹Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — ²Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany — ³Technische Universität Dresden, Dresden, Germany

Dilute magnetic semiconductors (DMS) have attracted much attention both from the application and fundamental physics points of view due to potential materials for spintronic device [1]. From application view, the perpendicular magnetic anisotropy (PMA) meets the needing, of which the current-induced magnetization reversal originating from a spin transfer torque (STT). For InMnAs, which could only be obtained by low temperature molecule beam epitaxy (LT-MBE) before, achieving high Curie temperature (TC) layer with PMA is relatively difficult. The reason is that, although much lattice mismatch between the DMS layer and the substrate brings inner strain and further PMA, the dislocations also come and suppress TC. However, low inner strain from mismatch make layer lose PMA.

We prepare high TC InMnAs layers with strong PMA by ion implantation and pulsed layer melting. The TC appears the highest one of InMnAs with PMA up to 77 K so far.

[1]. T. Dietl, et al., Rev. Mod. Phys. 86, 187-251 (2014)