Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 4: Thin Film Characterisation II: Structure Analysis and Composition

DS 4.2: Talk

Monday, March 16, 2015, 15:15–15:30, H 0111

Crystallinity of the Fe/GaAs interface for spintronics — •Rajkiran Tholapi, Lennart Liefeith, Michael Wachtel, Gerda Ekindorf, Taras Slobodskyy, and Wolfgang Hansen — Institute of Nanostructure and Solid State Physics, Jungiusstr. 11, D-20355 Hamburg, Germany.

Epitaxial Fe thin film on GaAs metal-semiconductor heterojunction system is a prospective hybrid structure for spin injection. The presence of either tunneling or Schottky barrier, crystalline quality, interface states and intermixing at the interface influence the overall efficiency of the spin injection process [1]. We will discuss results of X-ray and electron diffraction studies performed on epitaxial Fe films deposited with and without MgO tunneling barriers on GaAs (001) substrate. Moreover, the morphological, crystalline and electrical properties of the Fe films will be presented. We will also discuss the in situ strain evolution of the Fe films during deposition. We observed a high degree of crystallinity in epitaxial thin Fe films which is considered to be favorable for electrical spin injection.

[1] L. R. Fleet et. al., *Correlating the interface structure to spin injection in abrupt Fe/GaAs (001) films*, Phys. Rev. B 87, 024401 (2013)