Berlin 2015 –
wissenschaftliches Programm
DS 41: Semiconductor substrates: structure, epitaxy and growth (joint session with O)
Freitag, 20. März 2015, 10:30–12:45, MA 042
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10:30 |
DS 41.1 |
Surface and step conductivities at Si(111)-(7×7) surfaces investigated by multi-tip STM — •Sven Just, Marcus Blab, Stefan Korte, Vasily Cherepanov, Helmut Soltner, and Bert Voigtländer
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10:45 |
DS 41.2 |
Atomic structure of terbium-induced nanostructures on Si(111) — •Martin Franz, Jan Große, Robert Kohlhaas, and Mario Dähne
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11:00 |
DS 41.3 |
Tailoring Si(100) substrate surfaces for GaP growth by Ga predeposition — •Michael Häberle, Benjamin Borkenhagen, Gerhard Lilienkamp, and Winfried Daum
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11:15 |
DS 41.4 |
Calculated formation energies of charged defects at surfaces from the repeated-slab approach — •Christoph Freysoldt and Jörg Neugebauer
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11:30 |
DS 41.5 |
Nanoscale Structure of Si/SiO2/Organics Interfaces — •Hans-Georg Steinrück, Andreas Schiener, Torben Schindler, Johannes Will, Andreas Magerl, Oleg Konovalov, Giovanni Li Destri, Oliver H. Seeck, Markus Mezger, Julia Haddad, Moshe Deutsch, Antonio Checco, and Benjamin M. Ocko
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11:45 |
DS 41.6 |
Comparative study of Co and Ni germanides growth on Ge(001) substrates — •Tomasz Grzela, Wojciech Koczorowski, Giovanni Capellini, Ryszard Czajka, Neil Curson, and Thomas Schroeder
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12:00 |
DS 41.7 |
Investigation of the surface termination of BiTeI by combined STM/AFM — •Julian Berwanger, Florian Pielmeier, and Franz J. Giessibl
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12:15 |
DS 41.8 |
Morphology of ultra-thin ZnO on Ag(111) — •Bjoern Bieniek, Patrick Rinke, Takashi Kumagai, Shamil Shaikhutdinov, Bo Hong Liu, and Matthias Scheffler
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12:30 |
DS 41.9 |
Adding 3D to conventional SEM or FIB surface imaging information - In situ Surface Sensing and Nanoprofilometry for Focused Electron and Ion Beam Induced Processes Verification — •Frank Nouvertne, Axel Rudzinski, Torsten Michael, Marc Levermann, and Eva Maynicke
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