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DS: Fachverband Dünne Schichten

DS 9: Focussed Session: Doped Si nanostructures (joint session with HL)

DS 9.1: Hauptvortrag

Dienstag, 17. März 2015, 09:30–10:00, H 2032

Electronic doping of crystalline silicon nanoparticles — •Rui N. Pereira — Walter Schottky Institut and Physik-Department, Technische Universitaet Muenchen, Germany — Department of Physics and I3N, University of Aveiro, 3810-193 Aveiro, Portugal

Crystalline silicon nanoparticles (NPs) have been attracting much research interest due to their remarkable electronic, optical, and chemical properties. Si NPs combine the processing advantages enabled by nanoparticles with the unique features of Si at the nanoscale such as wavelength tunable light emission and multiple exciton generation. The natural abundance of silicon and its dominant role in microelectronics industry may also facilitate the introduction of Si NPs in commercial products such as solar cells and light emitting devices. The essential role played by doping in semiconductor technology has in recent years triggered the study of doping of Si NPs with n- and p-type dopants. In this presentation a review of the current knowledge of doping in Si NPs will be given. Particular focus will be given to NPs synthesized from gas-phase in silane plasmas, with which most of the investigations reported so far have been carried out.