Berlin 2015 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 9: Focussed Session: Doped Si nanostructures (joint session with HL)

DS 9.6: Hauptvortrag

Dienstag, 17. März 2015, 12:00–12:30, H 2032

Probing composition and conductivity in 3D-structures and confined volumes. — •Wilfried Vandervorst — Imec, Kapeldreef 75, B-3001 Leuven, Belgium

Developing and implementing next technology nodes is a complex task involving innovation in materials engineering, process development and device design. The down scaling of devices into non-planar structures has led to physical phenomena which can only been seen in 3D-structures and confined volumes such that the metrology is now pushed into dealing with analysis on a scale commensurate with device dimensions. Concepts like Atomprobe tomography with its inherent 3D-resolution are obviously a potential solution although its routine application is still hampered by localization problems, reconstruction artifacts due to inhomogeneous evaporation, sensitivity due to the limited statistics, poor tip yield, etc. On the other hand concepts like scanning probe microscopy are inherently 2D can be extended towards 3D appear either by the design of dedicated tests structures or by novel approaches such as mechanical scalping. Recent applications of Scalpel SPM have unraveled the filament formation in RRAM-devices and highlighted the conduction paths in NAND devices. Despite the apparent 1D-nature of Secondary Ion Mass Spectrometry, novel concepts like Self-focusing SIMS enable to probe layer composition within trenches as narrow as 20 nm.