Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 100: ZnO and its relatives

HL 100.11: Vortrag

Freitag, 20. März 2015, 12:15–12:30, EW 203

Influence of thiophene and pyridine containing fluorinated diketone-based passivation on the performance of ZnO TFTs — •Yulia Trostyanskaya, Marlis Ortel, Nataliya Kalinovich, Gerd-Volker Röschenthaler, and Veit Wagner — Jacobs University Bremen, Campus Ring 1, 28759 Bremen, Germany

Metal oxide TFTs are known to show unstable performance when the back channel is exposed to humid atmosphere. Therefore, ZnO TFTs deposited by spray pyrolysis were passivated by two different fluorine terminated diketones containing a pyridinyl- or a thienyl-group. All three groups are known to bind selectively to Zn-ions. XPS, AFM, UV-Vis and IV characterization of the passivated devices were conducted to distinguish between the effects of each bond type.

TFTs coated by thienyl-containing compounds showed a rise in mobility by 1,4 cm2/V and a shift of Von into negative direction. From XPS data, it was concluded that the diketo- and the thienyl-group bind to the back channel which indicates doping of the semiconductor due to the S-Zn bond. Samples passivated by pyridine-containing compound showed almost ideal Von of 0V, a small increase in mobility and only binding of the diketo-group to the surface. The tested materials stabilized the TFTs under negative and positive bias stress in ambient condition which indicates a successful passivation of active surface sites.