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HL: Fachverband Halbleiterphysik

HL 100: ZnO and its relatives

HL 100.3: Vortrag

Freitag, 20. März 2015, 10:00–10:15, EW 203

Low temperature PLD-growth of ZnO nanowires on Zn_xAl_1−xO films — •Alexander Shkurmanov, Chris Sturm, Helena Franke, Holger Hochmuth, and Marius Grundmann — Inst. f. Exp. Phy. II, Universität Leipzig, Leipzig, Germany

Self-organized grown ZnO micro- and nanostructures exhibit high crystallinity and good electronic properties which makes them interesting to be implemented in devices. In order to integrate these nanostructures in CMOS technology, a growth temperature of less than 450^∘C is required. For nanowires (NW) prepared by pulsed laser deposition (PLD) typically temperatures of about 900^∘C are used [1] and a reduction of temperature is quite challenging. In this work, we present the impact of the Al concentration of the ZnO seed layer on the NW growth and as a function of temperature in the range from 400^∘C to 950^∘C. At high temperatures (950^∘C), the Al concentration has a strong influence on the morphology of the NWs as well as on the NW density. The highest NW density we observed for an Al concentration of about 1.5% within the seed layer whereas for larger values, no NW growth was observed. By reducing the temperature down to 400^∘C a decrease of the density and length of NWs can be observed. This can be attributed to the reduced surface mobility of the incoming particles due to the reduced temperature and a possible change of the polarity of the seed layer by the Al incorporation [2]. [1] C.P. Dietrich, M. Grundmann in Wide Band Gap Semiconductor Nanowires 1, V. Consonni, G. Feuillet eds., (Wiley-ISTE, 2014). [2] S. Käbisch et al., Appl. Phys. Let. 103, 103106 (2013).