Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 100: ZnO and its relatives

HL 100.5: Vortrag

Freitag, 20. März 2015, 10:30–10:45, EW 203

Room-temperature fabricated amorphous oxide heterodiodes on glass and flexible substrates — •Peter Schlupp, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für experimentelle Physik II, Leipzig, Germany

Beside the lower energy input, room-temperature (RT) fabrication of semiconductors has the advantage that thermally unstable but flexible substrates can be used. The amorphous oxides n-type zinc-tin oxide (ZTO) and p-type zinc-cobalt oxide (ZCO) show promising semiconducting properties even though they are fabricated at RT [1,2]. Furthermore they contain abundant materials only.

We present electrical properties of ZTO/ZCO heterodiodes fabricated entirely at RT by pulsed laser deposition. These diodes were deposited on corning glass substrates and on flexible plastic substrates. To enhance the rectification of the diodes, an ultrathin insulating ZTO layer was introduced at the heterointerface leading to bipolar diodes with a rectification ration of more than six orders of magnitude. The diode properties and the conduction mechanism will be derived from temperature dependend current voltage measurements. Furthermore we have investigated the influence of bending of the flexible substrates on the diode properties.
[1] Schlupp et al., MRS Proceedings 1633, 101 (2014)

[2] Schein et al., Appl. Phys. Lett., 104, 022104 (2014)