Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 11: Transition-metal dichalcogenides and boron nitride (with O)
HL 11.5: Talk
Monday, March 16, 2015, 12:45–13:00, ER 270
Synthesis of atomically thin hexagonal boron nitride films on polycrystalline nickel substrates using MBE — •Siamak Nakhaie, Joseph M. Wofford, Timo Schumann, Uwe Jahn, João Marcelo Lopes, and Henning Riechert — Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
Hexagonal boron nitride (h-BN) has recently been the subject of an intense research effort. This has in large part been driven by the suitability of h-BN for integration into heterostructures with other 2-dimensional materials, such as graphene [1]. We report the synthesis of h-BN on polycrystalline Ni foils by molecular beam epitaxy (MBE) from elemental B and N. The presence of a well-ordered, crystalline h-BN film on the Ni foil substrate was confirmed using Raman spectroscopy, which revealed a sharp peak at 1365 cm−1. The ubiquity of wrinkle structures in numerous atomic force microscopy scans, together with the uninterrupted observation of the h-BN Raman signal, offer strong evidence of a continuous h-BN film. Using shorter duration depositions we were able to gain insight into the nucleation and growth behavior of h-BN before forming a closed film. According to scanning electron microscopy (SEM) images, we observed the morphology of sub-monolayer h-BN islands to evolve from star-shaped to much larger compact triangles with increasing growth temperature. SEM micrographs also clearly showed points of increased contrast at the approximate geometric centers of the islands, suggesting that the h-BN nucleated heterogeneously. [1] C.R. Dean et al., Nat. Nanotechnol. 5 (2010) 722